savantic semiconductor product specification silicon pnp power transistors 2SB993 d escription with to-220 package low collector saturation voltage large current capacity applications suitable for relay drivers,high-speed inverters,converters,and other general large-current switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -70 v v ceo collector- emitter voltage open base -50 v v ebo emitter-base voltage open collector -7 v i c collector current -7 a i cm collector current-peak -10 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB993 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ,r be = 8 -50 v v (br)cbo collector- base breakdown voltage i c =-1ma ,i e =0 -70 v v (br)ebo emitter-base breakdown voltage i e =-1ma ,i c =0 -7 v v cesat collector-emitter saturation voltage i c =-4a; i b =-0.4a -0.4 v i cbo collector cut-off current v cb =-50v; i e =0 -10 a i ebo emitter cut-off current v eb =-4v; i c =0 -10 a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-4a ; v ce =-1v 30 f t transition frequency i c =-1a ; v ce =-5v 10 mhz downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB993 package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm) downloaded from: http:///
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